| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique to improve a recording/holding reliability in the case of operating a phase change memory at a low voltage and at a high temperature, or leaving it as it is. SOLUTION: A high speed operation is performed with a readout voltage above set and reset voltages, and after a readout operation, the status prior to the readout operation is rewritten. That is, a so-called destructive readout is performed. Alternatively, a so-called OR-cell, in which a plurality of cells are used to record 1-bit information, is used to improve the reliability in the case of operating a phase change memory at a high temperature or leaving it as it is. There are used circuit constitution and operation method required by the phase change memory using the destructive readout and OR-cell. COPYRIGHT: (C)2010,JPO&INPIT |
