| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-purity Ni-V alloy having purity of≥99.9 wt.% which exhibits less variation among ingots, targets or thin films and has enhanced etchability and wherein the amount of isotope elements, such as U and Th, emitting alpha particles is reduced rigorously, to provide a target constituted of the Ni-V alloy, to provide a thin film of the Ni-V alloy, and to provide a method for producing a high-purity Ni-V alloy, which can effectively reduce such impurities. SOLUTION: The high-purity Ni-V alloy has a composition providing a nonmagnetic body. The purity of the Ni-V alloy excluding gas components is 99.9 wt.% or higher. The Ni-V alloy is characterized in that deposition of Ni8V being an intermetallic compound is suppressed, the impurity content of Cr, Al and Mg is respectively 10 ppm or less, the impurity content of U and Th is respectively less than 1 ppb, the impurity content of Pb and Bi is respectively less than 0.1 ppm, and the N content as impurities is 1-100 wt.ppm. The V content variation among alloy ingots is within 0.4%. COPYRIGHT: (C)2010,JPO&INPIT |
