发明名称 TEMPERATURE COMPENSATION OF MEMORY SIGNALS USING DIGITAL SIGNALS
摘要 A temperature sensor generates a digital representation of the temperature of the integrated circuit. A logic circuit reads the digital temperature and generates a multiple bit digital representation of an operational voltage and a multiple bit digital representation of a timing signal, both being functions of the integrated circuit temperature. A voltage generator converts the digital representation of the operational voltage to an analog voltage that biases portions of the integrated circuit requiring temperature compensated voltages. In one embodiment, the temperature compensated voltages bias memory cells. A timing generator converts the multiple bit digital representation of the timing signal to a logic signal.
申请公布号 US2010054068(A1) 申请公布日期 2010.03.04
申请号 US20090613114 申请日期 2009.11.05
申请人 MICRON TECHNOLOGY, INC. 发明人 INCARNATI MICHELE;SANTIN GIOVANNI
分类号 G11C7/04 主分类号 G11C7/04
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