| 摘要 |
<p>Disclosed is a method for manufacturing a silicon nitride-bonded SiC refractory material having excellent thermal shock resistance. The method of manufacturing a silicon nitride-bonded SiC refractory material is characterized in having a step wherein flat particles of an SiC powder, an Si powder, and at least one type selected from Al, AlN, Al oxide, Ca oxide, Mg oxide, Fe oxide, Ti oxide, and Zr oxide, are mixed together. The initial bulk density of the aforementioned SiC powder is preferably 1.40-1.55 g/cm3.</p> |
