| 摘要 |
<p>PURPOSE: A flash memory device and a manufacturing method thereof are provided to prevent a bridge between a contact plugs by forming a even group contact plug, a pad contact plug, and an odd group contact plug. CONSTITUTION: A flash memory device comprises a first contact plug(124a), a second contact plug(124b), a first and second conductive pads(130a,130b), a first and second pad contact plugs(138a,138b), and a first bit line(BL1) and a second bit line(BL2). The first contact plugs are formed on the semiconductor substrate(100). The second contact plugs is higher than first contact plugs. The first and second conductive pads are connected to the first contact plug. The first bit lines are connected to the first and second pad contact plugs. The second bit lines are connected to the second contact plugs.</p> |
