| 摘要 |
PROBLEM TO BE SOLVED: To reduce laminating failures by improving adhesion between a semiconductor layer and a base substrate. SOLUTION: An oxide film is formed on a semiconductor substrate and the semiconductor substrate is irradiated with accelerated ions through the oxide film, so that an embrittlement region is formed in a region having a predetermined depth from a surface of the semiconductor substrate. A bias voltage is applied to the oxide film on the semiconductor substrate and a base substrate to perform plasma processing thereon, the surface of the substrate and the surface of the base substrate are opposed to each other, the surface of the oxide film and the surface of the base substrate are bonded to each other, heat treatment is performed after the surface of the oxide film and the surface of the base substrate are bonded to each other, and then the substrates are separated from each other at the embrittlement region, so that a semiconductor layer is formed on the base substrate via the oxide film. COPYRIGHT: (C)2010,JPO&INPIT |
