| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, along with its manufacturing method, wherein the trouble caused by a step part formed between an element isolation insulating film and a semiconductor substrate is suppressed, by substantially allowing the element isolation insulating film to be flush with the main surface of semiconductor substrate. Ž<P>SOLUTION: The semiconductor device comprises a semiconductor substrate 50 having a main surface, grooves 14a-14c formed on the main surface of the semiconductor substrate 50, and element isolation insulating films 16a-16c filled in the groves 14a-14c. The difference in height between the main surface of the semiconductor substrate 50 and the element isolation insulating films 16a-16c, in thickness direction of the semiconductor substrate 50, is 5 nm or less. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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