发明名称 |
METHOD FOR FABRICATING NON-VOLATILE MEMORY |
摘要 |
A method for fabricating a non-volatile memory is provided. The method includes a stacked structure and a consuming layer are formed in sequence over a substrate. A converting process is performed at a peripheral region of the consuming layer to form a first insulating layer. A conductive layer is formed over the stacked layer and the first insulating layer.
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申请公布号 |
US2010055890(A1) |
申请公布日期 |
2010.03.04 |
申请号 |
US20090615450 |
申请日期 |
2009.11.10 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
KUO MING-CHANG |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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