| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element, in which selective etching on between two GaAs layers or two AlGaAs layers is precisely performed using an etching stopper layer, and an increase in contact resistance is suppressed. Ž<P>SOLUTION: The method of manufacturing the semiconductor element includes an etching step in which a first GaAs layer, an InAlGaAs layer, and a second GaAs layer are laminated in order and the second GaAs layer is etched using the InAlGaAs layer as an etching stopper layer, wherein the composition ratio of In and Al of the InAlGaAs layer as the etching stopper layer is 4:6 to 6:4, and the composition ratio of (In+Al) and Ga is 1.5:(8.5 to 5:5). The method further includes an etching step in which a first AlGaAs layer, an InAlAs layer, and a second AlGaAs layer are laminated in order and the second AlGaAs layer is etched using the InAlAs layer as an etching stopper layer, wherein the composition ratio of In and Al of the InGlAs layer as the etching stopper layer is 4:6 to 6:4. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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