| 摘要 |
In a fabrication method of fabricating a structure, a basic etching mask corresponding a target shape with a convex corner, and a correction etching mask with a first portion, a second portion and an opening portion are formed on a single-crystal silicon substrate with a (100) principal face, and the silicon substrate with the basic etching mask and the correction etching mask formed thereon is subjected to an anisotropic etching to form the silicon substrate having the target shape. The first portion extends in a <110> direction, respective ends of the first portion are connected to the basic etching mask, and at least one end of the first portion is connected to the convex corner of the basic etching mask. The second portion is connected to a side of the first portion extending in the <110> direction, the second portion includes at least one convex corner, and the opening portion extends straddling a boundary between the first portion and the second portion.
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