发明名称 |
MISFIT DISLOCATION FORMING INTERFACIAL SELF-ASSEMBLY FOR GROWTH OF HIGHLY-MISMATCHED III-SB ALLOYS |
摘要 |
Exemplary embodiments provide high-quality layered semiconductor devices and methods for their fabrication. The high-quality layered semiconductor device can be formed in planar with low defect densities and with strain relieved through a plurality of arrays of misfit dislocations formed at the interface of highly lattice-mismatched layers of the device. The high-quality layered semiconductor device can be formed using various materials systems and can be incorporated into various opto-electronic and electronic devices. In an exemplary embodiment, an emitter device can include monolithic quantum well (QW) lasers directly disposed on a SOI or silicon substrate for waveguide coupled integration. In another exemplary embodiment, a superlattice (SL) photodetector and its focal plane array can include a III-Sb active region formed over a large GaAs substrate using SLS technologies.
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申请公布号 |
US2010051900(A1) |
申请公布日期 |
2010.03.04 |
申请号 |
US20080332014 |
申请日期 |
2008.12.10 |
申请人 |
HUFFAKER DIANA L;DAWSON LARRY R;BALAKRISHNAN GANESH |
发明人 |
HUFFAKER DIANA L.;DAWSON LARRY R.;BALAKRISHNAN GANESH |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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