发明名称 |
METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR OPTICAL DEVICE AND EPITAXIAL WAFER |
摘要 |
In step S106, an InXGa1-XN well layer is grown on a semipolar main surface between times t4 and t5 while a temperature in a growth furnace is maintained at temperature TW. In step S107, immediately after completion of the growth of the well layer, the growth of a protective layer covering the main surface of the well layer is initiated at temperature TW. The protective layer is composed of a gallium nitride-based semiconductor with a band gap energy that is higher than that of the well layer and equal to or less than that of a barrier layer. In step S108, the temperature in the furnace is changed from temperatures TW to TB before the barrier layer growth. The barrier layer composed of the gallium nitride-based semiconductor is grown on the protective layer between times t8 and t9 while the temperature in the furnace is maintained at temperature TB. |
申请公布号 |
US2010055820(A1) |
申请公布日期 |
2010.03.04 |
申请号 |
US20090539887 |
申请日期 |
2009.08.12 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
AKITA KATSUSHI;ENYA YOHEI;KYONO TAKASHI;SUMITOMO TAKAMICHI;YOSHIZUMI YUSUKE;UENO MASAKI;NAKAMURA TAKAO |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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