| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition allowing selective removal of photoresist and etching residues from a substrate without exerting a destructive chemical action on metal possibly also exposed to the composition, and to provide a composition exhibiting a very minute amount of silicon oxide and generally a low etching rate on an insulating material. <P>SOLUTION: The composition suitable for removing photoresist and etching residues includes: (a) at least about 50 wt.% of a solvent selected from the group consisting of tetrafurfuryl alcohol, diacetone alcohol, 1,4-cyclohexanedi-methanol, and alkylene glycol ethers; (b) about 0.005-0.8 wt.% of a source of fluorine; (c) up to about 49.9 wt.% of water; and (d) up to about 20 wt.% of a corrosion inhibitor. In a method for removing photoresist and/or etching residue from the substrate, the substrate is brought into contact with the composition. <P>COPYRIGHT: (C)2010,JPO&INPIT |
