| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for plasma processing capable of widening the area of a processing range, allowing uniform treatment, and capable of changing easily design in response to a processing object. <P>SOLUTION: This apparatus for plasma processing is provided with a reactor R having a plurality of through holes 2 with a plasma generating gas G flowing in from an opening in one end side and with the activated plasma generating gas G flowing out from an opening in the other end side, and having a planar insulating base material 1 provided with a pair of electrodes 3, 4 for generating respectively discharges in the respective through holes 2. The pair of electrodes 3, 4 is formed in layers, and is opposed in a flowing direction of the plasma generating gas G in the through holes 2, to be embedded both-together into the insulating base material 1. A peripheral end part of the electrode 3 of a downstream in the flowing direction of the plasma generating gas G in the through holes 2 is projected more outwards than a peripheral end part of the electrode 4 of an upstream. <P>COPYRIGHT: (C)2010,JPO&INPIT |
