HIGH-PURITY Ru POWDER, SPUTTERING TARGET OBTAINED BY SINTERING THE HIGH-PURITY Ru POWDER, THIN FILM OBTAINED BY SPUTTERING THE TARGET, AND METHOD FOR PREPARING HIGH-PURITY Ru POWDER

摘要

PROBLEM TO BE SOLVED: To provide a high-purity Ru powder for use in manufacturing a sputtering target, which reduces the content of a hazardous substance as much as possible, produces less particles when the film is formed, shows a uniform film thickness distribution, has a purity of 4N (99.99%) or higher, and is suitable for forming an electrode material in a capacitor of a semiconductor memory; a sputtering target obtained by sintering the high-purity Ru powder; a thin film obtained by sputtering the target; and a method for preparing the high-purity Ru powder.

SOLUTION: The high-purity Ru powder has alkali metal elements such as Na and K each controlled to 10 wt.ppm or less and Al controlled to 1 to 50 wt.ppm. The method for preparing the high-purity Ru powder includes using an Ru raw material having a purity of 3N (99.9%) or less as an anode and electrolyzing the solution to refine the Ru raw material.

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