发明名称 HIGH-FREQUENCY WAVE SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a high-frequency wave substrate for simplifying a production process to reduce production cost. <P>SOLUTION: A first conductor layer 111 is provided to a first dielectric substrate 11, and a second conductor layer 121 is provided to a second dielectric substrate 12. The first dielectric substrate 11 and the second dielectric substrate 12 are combined so as to electrically contact the first conductor layer 111 and the second conductor layer 121 with each other. In addition, a first conductor layer 114 is provided to the first dielectric substrate 11 around a through-hole 112 so as not to contact to the first conductor layer 114 around the other through-hole 112, and a second conductor layer 124 is provided to the second dielectric substrate 12 around a through-hole 122 so as not to contact to the second conductor layer 124 around the other through-hole 122. The first dielectric substrate 11 and the second dielectric substrate 12 are combined so as to electrically contact the first conductor layer 114 and the second conductor layer 124 with each other. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010050253(A) 申请公布日期 2010.03.04
申请号 JP20080212667 申请日期 2008.08.21
申请人 TOSHIBA CORP 发明人 IKUMA YOSHIYUKI
分类号 H05K1/02;H05K1/14 主分类号 H05K1/02
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