| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser that can make high output in a fundamental transverse mode while preventing oscillation in a high-order transverse mode. Ž<P>SOLUTION: In the surface-emitting semiconductor laser, a transverse mode adjusting layer 20 is provided on a side of a substrate 10, that is, on a side opposite to a side where the laser is emitted. In the transverse mode adjusting layer 20, a reflectivity in an oscillating wavelength λ on a region opposite to a center region of a light-emitting region 13A is higher than that in the oscillating wavelength λ on a region opposite to an outer peripheral region of the light-emitting region 13A. Accordingly, light output in the fundamental transverse mode is not likely to be prevented by the transverse mode adjusting layer 20, thereby highly maintaining slope efficiency of the fundamental transverse mode. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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