| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a threshold voltage is controlled and variations of characteristics are suppressed. Ž<P>SOLUTION: The semiconductor device 1 includes: a substrate 2; an STI element isolation region 3; active regions 4; a first gate trench 5 formed in the active region 4; a second gate trench 6 provided on the bottom of the first gate trench 5; a gate electrode 8 embedded and formed in the first and second gate trenches 5, 6 via a gate insulation film 7; and a source/drain region 9 formed by implanting ions into the active regions 4 on both sides of a width direction of the first gate trench 5. In the semiconductor device 1, a silicon thin film 10 configuring a channel is formed between the second gate trench 6 and the STI element isolation region 3 positioned in a longitudinal direction of the second gate trench 6. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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