发明名称 |
SELECTIVE GROWTH OF POLYCRYSTALLINE SILICON-CONTAINING SEMICONDUCTOR MATERIAL ON A SILICON-CONTAINING SEMICONDUCTOR SURFACE |
摘要 |
A method of depositing polycrystalline silicon exclusively on monocrystalline first silicon surface portions of a substrate surface which besides the first surface portions additionally has insulator surface portions, comprising the steps of depositing boron on the first silicon surface portions in an amount which in relation to the first silicon surface portions respectively corresponds to more than a monolayer of boron, and depositing silicon on the first silicon surface portions treated in that way.
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申请公布号 |
US2010055880(A1) |
申请公布日期 |
2010.03.04 |
申请号 |
US20080449335 |
申请日期 |
2008.02.15 |
申请人 |
TILLACK BERND L;HEINEMANN BERND;YAMAMOTO YUJI |
发明人 |
TILLACK BERND L.;HEINEMANN BERND;YAMAMOTO YUJI |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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