| 摘要 |
The invention relates to a semiconductor device manufactured in a process technology, the semiconductor device having at least one wire (135) located in an interconnect layer of said semiconductor device, the at least one wire (135) having a wire width (W) and a wire thickness (T), the wire width (W) being equal to a minimum feature size of the interconnect layer as defined by said process technology, wherein the minimum feature size is smaller than or equal to 0.32 μm, wherein the aspect ratio (AR) of the at least one wire (135′) is smaller than 1.5, the aspect ratio (AR) being defined as the wire thickness (T) divided by the wire width (W). The invention further discloses a method of manufacturing such a semiconductor device.
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