发明名称 LOW-COST DOUBLE STRUCTURE SUBSTRATES AND METHODS FOR THEIR MANUFACTURE
摘要 In preferred embodiments, the invention provides substrates that include a support, a first insulating layer arranged on the support, a non-mono-crystalline semi-conducting layer arranged on the first insulating layer, a second insulating layer arranged on the non-mono-crystalline semi-conducting layer; and top layer disposed on the second insulating layer. Additionally, a first gate electrode can be formed on the top layer and a second gate electrode can be formed in the non-mono-crystalline semi-conducting layer. The invention also provides methods for manufacture of such substrates.
申请公布号 WO2010002516(A3) 申请公布日期 2010.03.04
申请号 WO2009US44825 申请日期 2009.05.21
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;NGUYEN, BICH-YEN;MAZURE, CARLOS 发明人 NGUYEN, BICH-YEN;MAZURE, CARLOS
分类号 H01L21/20 主分类号 H01L21/20
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