发明名称 |
LOW-COST DOUBLE STRUCTURE SUBSTRATES AND METHODS FOR THEIR MANUFACTURE |
摘要 |
In preferred embodiments, the invention provides substrates that include a support, a first insulating layer arranged on the support, a non-mono-crystalline semi-conducting layer arranged on the first insulating layer, a second insulating layer arranged on the non-mono-crystalline semi-conducting layer; and top layer disposed on the second insulating layer. Additionally, a first gate electrode can be formed on the top layer and a second gate electrode can be formed in the non-mono-crystalline semi-conducting layer. The invention also provides methods for manufacture of such substrates. |
申请公布号 |
WO2010002516(A3) |
申请公布日期 |
2010.03.04 |
申请号 |
WO2009US44825 |
申请日期 |
2009.05.21 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;NGUYEN, BICH-YEN;MAZURE, CARLOS |
发明人 |
NGUYEN, BICH-YEN;MAZURE, CARLOS |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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