Luminescent radiation measuring method for sawn coarse silicon wafer used to manufacture silicon solar cell, involves determining corrected intensity value so that measured reflection intensities are scaled with location-independent factor

摘要

The method involves measuring reflection intensities for each location point of a measuring side (1a) by a camera (2) e.g. charge coupled device camera. An excitation radiation reflected on the side is not or only partly suppressed by a filter unit (3) e.g. short pass filter. A corrected value of a luminescent radiation intensity is determined. The corrected intensity value is determined such that the measured reflection intensities are extracted from a measured intensity of a part of a radiation irradiated from the side and are scaled with a preset location-independent factor.