| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device, along with its manufacturing method, capable of forming an element region whose dimension is close to design dimension, capable of suppressing occurrence of a phenomenon similar to GIDL, and capable of suppressing a compression stress applied to the element region by oxidizing a conductive film. <P>SOLUTION: A groove TR is formed on the main surface of a semiconductor substrate SB. By oxidizing a wall surface of the groove TR, a first oxide film TO1a is formed on the wall surface. An embedded conductive film BC is so formed as to fill the groove TR. By oxidizing the embedded conductive film BC under the atmosphere containing active oxidizing species, a second oxide film TO1b is formed. A third oxide film TO2 is formed in the second oxide film TO1b by a vapor growth method or application method. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
