| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a multibeam semiconductor laser that is improved in heat dissipation when assembled in a junction-down manner. Ž<P>SOLUTION: Contact electrodes 12A, 12B are provided at convex sections 11A and 11B of a semiconductor laser element 10, and pad electrodes 13A, 13B are provided avoiding the convex sections 11A, 11B and contact electrodes 12A, 12B. The contact electrodes 12A, 12B are connected to the pad electrodes 13A, 13B by wiring electrodes 14A, 14B, respectively, and are covered with a first insulating film 15 to be electrically connected without being bonded directly to a solder layer. On the first insulating film 15, a thermally conductive layer 16 made of metal is provided and is bonded to the solder layer to improve the heat dissipation even when junction-down assembly is employed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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