| 摘要 |
A static RAM cell may be formed on the basis of two double channel transistors and a select transistor, wherein a body contact may be positioned laterally between the two double channel transistors in the form of a dummy gate electrode structure, while a further rectangular contact may connect the gate electrodes, the source regions and the body contact, thereby establishing a conductive path to the body regions of the transistors. Hence, compared to conventional body contacts, a very space-efficient configuration may be established so that bit density in static RAM cells may be significantly increased.
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