| 摘要 |
According to an aspect of the present invention, there is provided a nonvolatile memory including: a cell transistor including: a gate electrode and first and second diffusion layers; a second insulating film covering the cell transistor; first and second plugs penetrating the second insulating film to reach the first and second diffusion layers, respectively; a ferroelectric capacitor having a ferroelectric film and first and second electrodes, the first electrode contacting with the first plug; a first conductive spacer contacting with the second plug and including the same material as the first electrode; a third insulating film covering side faces of the first electrode, the ferroelectric film and the first conductive spacer; and a first wiring that is continuously formed with the second electrode and connected to the first conductive spacer and that includes the same material as the second electrode.
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