| 摘要 |
A silicon wafer is produced through the steps of forming a silicon ingot by a CZ method with an interstitial oxygen concentration of not more than 7.0×1017 atoms/cm3, slicing a wafer from the silicon ingot after doping the silicon ingot with phosphorus, forming a polysilicon layer or a strained layer on one main surface of the wafer, mirror polishing the other main surface of the wafer, and performing a heat treatment for the wafer in a non-oxidizing atmosphere.
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