发明名称 |
CONCENTRIC PHASE CHANGE MEMORY ELEMENT |
摘要 |
The present invention in one embodiment provides a memory device including a first electrode; a second electrode; and a memory cell positioned between the first electrode and the second electrode, the memory cell including a core of a first phase change material and a cladding of a second phase change material, wherein the first phase change material has a lower crystallization temperature than the second phase change material. The present invention also provides methods of forming the above described memory device.
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申请公布号 |
US2010054029(A1) |
申请公布日期 |
2010.03.04 |
申请号 |
US20080198383 |
申请日期 |
2008.08.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;QIMONDA NORTH AMERICA CORP. |
发明人 |
HAPP THOMAS D.;SCHROTT ALEJANDRO G. |
分类号 |
G11C11/00;H01L45/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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