TUNNELING MAGNETORESISTIVE DEVICE

摘要

A tunneling magnetoresistive device includes: a fixed layer that includes a ferromagnetic material; a tunneling insulating film that is provided in contact with the fixed layer; and a free layer that includes a first ferromagnetic film provided in contact with the tunneling insulating film, a second ferromagnetic film whose magnetization is coupled parallel to the magnetization of the first ferromagnetic film, and a conductive film interposed between the first ferromagnetic film and the second ferromagnetic film.