| 摘要 |
The present invention relates to a ferroelectric material used as a component of an electronic and electrical material and a ferroelectric layer formation method using the same. In one embodiment of the present invention, a metallic material, Fe, is mixed with an existing ferroelectric material to form a novel ferroelectric material. The ferroelectric material of the present invention has a very high value of remanent polarization, compared with existing ferroelectric materials. Accordingly, the ferroelectric material according to the present invention can advantageously be employed as a material for a semiconductor memory or piezoelectric element, etc. |
