| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing the diffusion of metal from the upper surface of wiring. SOLUTION: A copper seed film 4 containing a copper and a first metal element is formed in a groove 2 formed in a first interlayer film 1 over a semiconductor substrate. After that, a copper plating treatment is performed. After that, a first heat treatment is performed in a first atmosphere in which the copper layer is not oxidized. Then, an excess metal layer of copper alloy is removed and copper alloy wiring 6 is formed in the groove 2. After that, a second heat treatment is performed in a second atmosphere containing oxygen to form an oxide layer 7 being the oxide of the first metal element over the surface of the copper alloy wiring 6. COPYRIGHT: (C)2010,JPO&INPIT |
