| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein adjoining contact plugs are prevented from being short-circuited even if the arrangement pitch of the contact plugs becomes narrow, and the contact plug and a wiring pattern connected to it can be easily formed, and to provide a method of manufacturing the same. SOLUTION: This semiconductor device includes a transistor having a gate electrode 11, a source region, and a drain region 12, an interlayer insulating film 14 covering the transistor, a contact plug 15 provided so as to pass through the interlayer insulating film 14 and connected to one of the source region and the drain region 12, an interlayer insulating film 26 covering the contact plug 15, a groove 27 extending in the same direction as the extending direction of the gate electrode 11 in the interlayer insulating film 26 and exposing the top face of the contact plug 15 on its bottom part, a contact plug 28c connected to the contact plug 15 and provided in the groove 27, and the wiring pattern 28w integrated with the contact plug 28c and extended on the interlayer insulating film 26 so as to cross the groove 27. COPYRIGHT: (C)2010,JPO&INPIT |
