| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for accurately and easily forming an insulating film having a good flatness with a desired thickness. Ž<P>SOLUTION: The manufacturing method includes: a first step of depositing the first insulating film on a semiconductor substrate on which a plurality of convex patterns are disposed; a second step of removing the area of the first insulating film corresponding to the upper face of the convex pattern by anisotropic etching with the upper face of the convex pattern as a stopper, and exposing the convex pattern and forming a convex part consisting of the first insulating film; a third step of depositing a second insulating film on the semiconductor substrate so as to cover the convex pattern and the convex part consisting of the first insulating film; and a fourth step of planarizing the convex part consisting of the first insulating film and the second insulating film covering the convex part by removing them at least to the surface height of the second insulating film on the convex pattern by a CMP process, and forming an insulating layer deposited on the second insulating film deposited on the convex pattern and the first insulating film deposited on the area between the juxtaposing convex patterns. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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