| 发明名称 |
SYMMETRIC STT-MRAM BIT CELL DESIGN |
| 摘要 |
<p>A symmetric Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cell and STT-MRAM bit cell array are disclosed. The STT-MRAM bit cell includes a poly silicon layer, a magnetic tunnel junction (MTJ) storage element, and a bottom electrode (BE) plate.</p> |
| 申请公布号 |
WO2010025106(A1) |
申请公布日期 |
2010.03.04 |
| 申请号 |
WO2009US54760 |
申请日期 |
2009.08.24 |
| 申请人 |
QUALCOMM INCORPORATED;XIA, WILLIAM |
发明人 |
XIA, WILLIAM |
| 分类号 |
G11C11/16;H01L27/22;H01L43/08;H01L43/12 |
主分类号 |
G11C11/16 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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