BIPOLAR SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a bipolar silicon carbide semiconductor device which is a BJT having a four-layered structure and achieves an improved current amplification factor and a small and stable base resistance by reducing the probability of recombination of electrons and holes and thereby suppressing recombination between a main current and a control current.  The semiconductor device comprises a recombination suppression region (16) having the same conductivity type as and a higher resistivity than a base region (15) or a recombination suppression region (16) having the same conductivity type as and a higher resistivity than an emitter region (12), which is formed near the surface between a base contact region (13) and the emitter region (12).