发明名称 PHOTOLITHOGRAPHY PROCESS METHOD AND WAFER COOLING UNIT FOR PREVENTING ION CHARGING ON WAFER
摘要 <p>PURPOSE: A photolithography process method and a wafer cooling unit for preventing an ion charging on a wafer are provided to prevent the loss of a wafer due to ion charging by transferring a charged ion to the outside. CONSTITUTION: A photo process method comprises a coating process, an exposure process, a photolithography process, a cleaning process, and a cooling process. The cooling process cools a wafer. An ion is charged on the surface of the wafer through the cleaning process. The cooling process neutralizes the charged ion. The wafer cooling unit(70) comprises a wafer support(72) and a plurality of lift pins(74). The wafer mounting unit supports the wafer. A plurality of lift pins is installed in the wafer mounting unit. A plurality of lift pins transfers the wafer up and down. The lift pin is connected to the ground line(77).</p>
申请公布号 KR20100023192(A) 申请公布日期 2010.03.04
申请号 KR20080081830 申请日期 2008.08.21
申请人 DONGBU HITEK CO., LTD. 发明人 LIM, BYUNG JIN
分类号 H01L21/027 主分类号 H01L21/027
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