| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of nitriding a base material surface, such as a semiconductor or a metal or the like, under a relatively mild condition by the hot wiring method (the hot wiring CVD method). SOLUTION: In a hot wiring method consisting of contacting a nitrogen-containing gas to a heated catalyser, of reacting a chemical seed generated by the catalytic cracking reaction with a base material surface, and of forming a nitride film on the base material surface, the method of nitriding the base material surface includes using a gas obtained by adding hydrogen of 10% or less to a nitrogen gas as the nitrogen-containing gas. COPYRIGHT: (C)2010,JPO&INPIT
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