发明名称 SEMICONDUCTOR-BASED BROADBAND MODULATORS
摘要 An optical modulator is provided. The optical modulator includes a ridge-shaped active region comprising a plurality of alternating high and low index layers. The ridge-shaped active region is used to confine a selective optical mode for optical modulation. A plurality of oxidized layers positioned so as to confine the selective optical mode in the middle region of the ridge-shaped active region. The oxidized layers enable the optical modulator to withstand high operating voltages both in reverse and forward bias without concern of breakdown or carrier loss.
申请公布号 US2010054656(A1) 申请公布日期 2010.03.04
申请号 US20080198307 申请日期 2008.08.26
申请人 KOLODZIEJSKI LESLIE A;PETRICH GALE S;SHAMIR ORIT 发明人 KOLODZIEJSKI LESLIE A.;PETRICH GALE S.;SHAMIR ORIT
分类号 G02F1/295;G02F1/00 主分类号 G02F1/295
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