| 摘要 |
Provided are a semiconductor device and a manufacturing method thereof by which reverse recovery time can be reduced without increasing leakage current between the drain and the source. With the semiconductor device and manufacturing method thereof, a first base layer (12), a drain layer (10) that is provided on the back surface of the first base layer (12), second base layers (16) that are formed on the front surface of the first base layer (12), source layers (18) that are formed on the front surfaces of the second base layers (16), gate insulating films (20) that are disposed on the front surfaces of the source layers (18) and the second base layers (16), gate electrodes (22) that are disposed on the gate insulating films (20), column layers (14) that are formed inside the first base layer (12) below the second base layers (16) and the source layers (18) so as to face the drain layer (10), a drain electrode (28) that is provided on the drain layer (10), and a source electrode (26) that is provided on the source layers and the second base layers are provided. The column layers (14) are irradiated with baryons and trap levels are formed locally. |
