发明名称 MAGNETORESISTIVE ELEMENT, LOGIC GATE, LOGICAL GATE OPERATION METHOD
摘要 <p>A logic gate (40) includes: a magnetoresistive element (1), a magnetization state control unit (50), and an output unit (60).  The magnetoresistive element (1) has N (N is an integer not smaller than 3) magnetic layers (10) and N-1 non-magnetic layers which are alternately layered.  The magnetoresistive element (1) has a resistance value (R) which is changed by the magnetization state of the N magnetic layers (10).  The magnetization state control unit (50) sets respective magnetization states of the N magnetic layers (10) in accordance with N types of input data.  The output unit (60) outputs output data which is changed in accordance with the resistance value (R) of the magnetoresistive element (1).</p>
申请公布号 WO2010024126(A1) 申请公布日期 2010.03.04
申请号 WO2009JP64262 申请日期 2009.08.12
申请人 NEC CORPORATION;SUGIBAYASHI, TADAHIKO;SAKIMURA, NOBORU;NEBASHI, RYUSUKE 发明人 SUGIBAYASHI, TADAHIKO;SAKIMURA, NOBORU;NEBASHI, RYUSUKE
分类号 H03K19/18;H01L43/08 主分类号 H03K19/18
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