METHOD OF MANUFACTURING MEMORY DEVICE

摘要

PURPOSE: A method of manufacturing a memory device is provided to improve an overlap margin of a capacitor and a contact plug by exposing the surface of contact plug. CONSTITUTION: A contact plug is installed between interlayer dielectric film patterns. The contact plug is performed through an etch process. A buffer film pattern is formed on the contact plug(252). A mold layer is formed on the buffer film pattern and interlayer dielectric film pattern. A first opening exposes a part of the surface of the contact plug. A second opening exposes the surface of the contact plug to the outside. The second opening is formed by removing the buffer film pattern. A capacitor(280) is formed in the second aperture and is connected to the surface of the contact plug.