| 摘要 |
A semiconductor device (10) is formed in a semiconductor layer (16). A gate dielectric (20) is formed over a top surface of the semiconductor layer (16). A gate stack (18) is over the gate dielectric (20). A sidewall spacer (24) is formed around the gate stack (18). Using the sidewall spacer (24) as a mask, an implant is performed to form deep source/drain regions (28, 30) in the semiconductor layer. Silicon carbon regions (32, 36, 34) are formed on the deep source/drain regions (28, 30) and a top surface of the gate stack. The silicon carbon regions (32, 34, 36) are silicided with nickel.
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