| 发明名称 |
HYBRID IC DEVICE, AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a hybrid IC device composed of a metal substrate, in a compact shape. <P>SOLUTION: Slits SL are formed on four side surfaces of the metal substrate 20, plugs 25 as external terminals are provided on the metal substrate 20, and heads of the plugs are exposed from a sealing resin 26. With the configuration, the hybrid ID device is obtained which is a surface mounted type and has no lead protruded from a package. <P>COPYRIGHT: (C)2010,JPO&INPIT |
| 申请公布号 |
JP2010050349(A) |
申请公布日期 |
2010.03.04 |
| 申请号 |
JP20080214483 |
申请日期 |
2008.08.22 |
| 申请人 |
SANYO ELECTRIC CO LTD;SANYO SEMICONDUCTOR CO LTD |
发明人 |
SAKAMOTO NORIAKI;YOSHII MASURAO |
| 分类号 |
H01L25/00;H01L21/56;H01L23/12;H05K1/05;H05K3/00;H05K3/44 |
主分类号 |
H01L25/00 |
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