DOWNSIZE POLYSILICON HEIGHT FOR POLYSILICON RESISTOR INTEGRATION OF REPLACEMENT GATE PROCESS

摘要

A semiconductor device and method for fabricating a semiconductor device protecting a resistive structure in gate replacement processing is disclosed. The method comprises providing a semiconductor substrate; forming at least one gate structure including a dummy gate over the semiconductor substrate; forming at least one resistive structure including a gate over the semiconductor substrate; exposing a portion of the gate of the at least one resistive structure; forming an etch stop layer over the semiconductor substrate, including over the exposed portion of the gate; removing the dummy gate from the at least one gate structure to create an opening; and forming a metal gate in the opening of the at least one gate structure.