JUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a junction semiconductor device which achieves an increase in current amplification factor.  The junction semiconductor device comprises a recombination suppressing region (16) formed so as to cover at least the side surfaces of a gate region (13). The recombination suppressing region (16) is formed by a p- semiconductor having a resistivity higher than that of the gate region (13) or an n- semiconductor having a resistivity higher than that of a high resistive layer (14). Thus, the probability of recombination of electrons and holes in the region around the gate region or the like is reduced, and the recombination of the principal current flowing between the main electrodes and the control current flowing in the control electrode is suppressed, thereby enabling both an increase in the current amplification factor and an increase in the current density due to miniaturization.