METHODS FOR FABRICATING NONVOLATILE MEMORY DEVICES

摘要

PURPOSE: A methods for fabricating nonvolatile memory devices is provided to improve charge retention by reducing the charge loss of a memory region. CONSTITUTION: A non-volatile memory device comprises a charge trapping layer(120). The charge trapping layer is formed on the semiconductor substrate(100). The charge trapping layer comprises a memory region and an electric charge blocking region(130). The manufacturing method of the non-volatile memory device traps the electric charges in the electric charge blocking region. The electric charge blocking regions surrounds the memory region.