| 摘要 |
<p>PURPOSE: A flash memory device and a method of manufacturing thereof are provided to a retention characteristic of a device by preventing the penetration of a poly-silicon into an internal organic film. CONSTITUTION: A flash memory device comprises a tunnel insulating layer(101), a floating gate film(102), a first protective film(103), a dielectric film(104), and a second protective film(105). The first and the second protective film are formed on a nitride film. A control gate film(106) and a metal gate film(107) are formed on the second protective film. A sealing film(109) is formed on the sidewall of the control gate film, the floating gate film, the first protective film, the dielectric film, and second protective film.</p> |
