Semiconductor Device

摘要

The present invention provides a capacitor lower electrode (13a) formed on an adhesive layer (12) whose surface roughness is 0.79 nm or less, a ferroelectric layer (14a) having an ABO 3 perovskite structure, the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate (1) by 3.5° or less, and a capacitor upper electrode (15a).