发明名称
摘要 <p>A semiconductor memory device includes a memory cell unit including at least one semiconductor memory cell, a voltage generating circuit which produces an operating voltage to which reference is made in performing a predetermined operation on the memory cell unit. The device further includes a constant-current circuit capable of a current trimming operation and adapted to supply a constant current to the voltage generating circuit.</p>
申请公布号 JP4427365(B2) 申请公布日期 2010.03.03
申请号 JP20040080813 申请日期 2004.03.19
申请人 发明人
分类号 G11C16/06;G11C29/02;H03B1/00 主分类号 G11C16/06
代理机构 代理人
主权项
地址