| 摘要 |
Fluorine-containing film (14) is applied to the iron-based substrate (11) over an intermediate layer (12) of high-crystalline silicon oxide. A binding layer (13) which consists of a lesser crystalline silicon oxide with a lower crystallinity than the high-crystalline silicon is formed on the intermediate layer and the film coating is then applied over the binding layer. Intermediate layer is formed by heat treatment at temperatures of 500 to 600 [deg] C. Independent claim describes method for manufacturing a fluorine-containing film structure comprising the fluid containing silicon oxide to the iron based substrate, forming the intermediate layer by heat treatment and forming a binding layer. |
